Extended Power Rating of 1200V IGBT Module with 7G RCIGBT Chip Technologies

Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2016

Seiten: 7Sprache: EnglischTyp: PDF

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Autoren:
Takahashi, Misaki; Yoshida, Souichi; Tamenori, Akira; Kobayashi, Yasuyuki; Ikawa, Osamu (Fuji Electric Co. Ltd., Japan)
Hofmann, Daniel (Fuji Electric Europe GmbH, Germany)

Inhalt:
Recently the main requirements for IGBT modules are increasing the power density and higher efficiency with sufficient reliability. To fulfill these requirements a new RC-IGBT (7G RCIGBT) module based on Fuji Electric’s latest 7th generation (7G) chip and package technology and RC-IGBT technology was developed. In this paper 7G RC-IGBT module was fabricated which achieved 40% smaller chip size compared to 6th generation (6G) IGBT+FWD with 12% smaller inverter loss. Therefore, the current rating of DualXT package was extended from 6G 600A to 1000A which reaches the region of PrimePACK2(exp TM). Additionally the DC lock and low frequency (Fo=1Hz) dTjc peak are 50% reduced compared to 6G module. In conclusion 7G RC-IGBT module enables further miniaturization and cost down and high reliability of power conversion systems.