SiC JFET Cascode Enables Higher Voltage Operation in a Phase Shift Full Bridge DC-DC Converter
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 8Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Dodge, Jonathan (United Silicon Carbide, USA)
Inhalt:
This paper presents a phase shift full bridge (PSFB) operating with 800 V input, 48 V output and utilizing SiC JFET cascode devices as the full bridge switches. The construction and characteristics of the cascode make it ideally suited for operation in PSFB converters. Greatly improved on-resistance and output capacitance per chip area, and low switching loss enable cost effective and efficient operation at higher operating voltages. Reliability is improved by eliminating the body diode failure mode in the PSFB. A gate drive compatible with conventional IGBTs and MOSFETs rejects noise and minimizes cost. Experimental results are included.