Cosmic Ray Failure Mechanism and Critical Factors for 3.3kV Hybrid SiC Modules
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 7Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Nitta, Tetsuya; Sakiyama, Yoko; Kotani, Raita; Inoue, Tomoki; Ohara, Ryoichi; Sano, Kenya; Yamaguchi, Masakazu (Toshiba Corporation, Japan)
Tchouangue, Georges (Toshiba Electronics Europe GmbH, Germany)
Inhalt:
The cosmic ray failure mechanism for a 3.3kV IGBT has been investigated. It could be clarified that the dynamic avalanche current dominates the catastrophic self-heating, and the impact of the parasitic bipolar action is negligible for a 3.3kV IGBT unlike a lower voltage class IGBT. For practical use, the integral over the electric field with a specific threshold value was proposed as an index for the robustness for a High Voltage (HV) IGBT such as a 3.3kV class device. The cosmic ray robustness of a 3.3kV SiC Schottky Barrier Diode (SBD) was also investigated: it was found that the failure rate is almost the same as that of 3.3kV class Si devices.