Issues in Testing Advanced Power Semiconductor Devices

Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2016

Seiten: 8Sprache: EnglischTyp: PDF

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Autoren:
Farkas, Gabor (Mentor Graphics MAD Division, Hungary)
Sarkany, Zoltan; Rencz, Marta (BME Department of Electron Devices, Hungary)

Inhalt:
Thermal transient testing is a widely used tool in reliability testing of power semiconductors and structure integrity analysis of packages, cooling mounts etc. The paper demonstrates novel concepts for powering and sensing in thermal tests when wide bandgap compound semiconductor components (GaN, SiC) replace silicon. We highlight problems like the non-linearity of devices in broad temperature ranges; and slow effects (surface charge, carrier absorption on traps) producing false transient signals. We propose methods to overcome these obstacles.