Communicating Gate Driver for SiC MOSFET
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 8Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Bouguet, Christophe (ECA GROUP, ZAC des hauts de Couëron, 24 rue Jan Palach, 44220 COUERON, France & UBL Université - Université de Nantes, IETR, Rue Christian Pauc, BP 50609, 44306 Nantes cedex 3, France)
Ginot, Nicolas; Batard, Christophe (UBL Université - Université de Nantes, IETR, Rue Christian Pauc, BP 50609, 44306 Nantes cedex 3, France)
Inhalt:
Currently, the gate driver unit for power semiconductors provides the control of the components and ensures the safety of the switching cell. The integration of a communication function on a driver is described in this article. This new function sets up a communication channel between the primary side and the two control channels of the driver that are located on the secondary sides. The communication is done by using the CAN protocol. This paper introduces an innovative solution to provide a galvanic insulation to a CAN bus that fits the specific requirements of power electronics, especially a low parasitic capacity primary - secondary and the immunity to high dv/dt. A first prototype was designed and the experimental results are exposed. This project is a joint effort between the IETR laboratory and ECA Group Company