High power, high frequency gate driver for SiC–MOSFET modules
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Koenigsmann, Gunter; Herzer, Reinhard; Buetow, Sven; Rossberg, Matthias (SEMIKRON Elektronik GmbH & Co. KG, Sigmundstr. 200, 90431 Nuremberg, Germany)
Inhalt:
A high power, high frequency gate driver with high integration density using ASICs allowing to drive very low inductive 1200 V, 400 A SiC-MOSFET half bridge modules in both-side sinter technology (SKiN) is presented for the first time. Because of its low propagation delay, low dead times and very strong output stages of Ipeak = +40/-78 A, the driver is excellently suited to switch the 400 A MOSFETs with a switching frequency up to 200 kHz with extremely low switching losses and low overvoltages.