Best-in-class 1200V IGBT for High Frequency Applications
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Tadikonda, Ramakrishna; Cerezo, Jorge; Ng, Chiu (Infineon Technologies Americas Corp, El Segundo, USA)
Inhalt:
Modern Power Converters demand increase in efficiency and power density while keeping the costs low by increasing the switching frequency of Power devices. A major challenge to increase switching frequency of Insulated Gate Bipolar Transistor (IGBT) is due to large presence of minority carriers during turn-off event. A 1200V ultra-fast Trench IGBT based on Field Stop technology has been developed and optimized exclusively for high switching frequency applications in the range of 30kHz to 100kHz. This paper describes the feature of this ultra-fast switching IGBT in a critical comparison with equivalent products available in the market today.