800V Super Junction MOSFET (HV-DTMOS IV) with better trade-off between switching loss and dVDS/dt

Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2016

Seiten: 6Sprache: EnglischTyp: PDF

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Irifune, Hiroyuki; Ohta, Hiroshi (Kaga Toshiba Electronics Corporation, Japan)
Yamashita, Hiroaki; Ura, Hideyuki; Mii, Kenji; Nashiki, Masato; Kako, Naotsugu (Toshiba Corporation Semiconductor & Storage Products Company, Japan)
Tchouangue, Georges, (Toshiba Electronics Europe GmbH, Germany)

A new generation 800V-class MOSFET, HV-DTMOS IV, is developed using super junction (SJ) technology. The proposed device shows high speed and low loss switching characteristics. By optimizing the drift region and MOS structure, the specific on-state resistance RDS(on)*A and the switching F.O.M. RDS(on)*QG could be reduced by 27% and 69% respectively compared to the competitor. The trade-off between switching loss and the drain-source voltage change rate (dVDS/dt) could also show better results compared to a competitor’s SJ-MOSFET.