Effect of Self Turn-ON during turn-ON of HV-IGBTs
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 8Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Muenster, Patrick; Lexow, Daniel; Eckel, Hans-Guenter (University of Rostock, Germany)
Inhalt:
During the turn-ON of a high-voltage IGBT a Self Turn-ON can be observed, which is analysed in this paper. This positive feedback, which has not been observed in HV-IGBTs before, is caused by a Self-Charging Displacement Current. This effect influences the turn-ON process and can lead to oscillations of the gate-emitter voltage. The results are based on high-voltage measurements on single-chip modules and semiconductor simulations.