An innovative 6500V HVIGBT with high robustness
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Hu, Bo; Song, Gaosheng (Mitsubishi Electric & Electronics (Shanghai) Co., Ltd, China)
Inhalt:
The paper introduces a new type 1000A/6500V HVIGBT (High Voltage Insulated Gate Bipolar Transistor). The new generation Mitsubishi Electric HVIGBT modules, X-series HVIGBT, use the latest IGBT chip and diode chip technology. As a result, it can significantly reduce the conduction saturation voltage, the switching losses and the thermal resistance. In this paper, the electrical characteristics are presented. Due to its excellent performance, it is very suitable for the traction application, and the detailed applications in 4QC (4-Quadrant Converter) and PWMI (Pulse Width Modulation Inverter) are talked to express the advantages.