Aspects of reliability improvement for large area power semiconductor devices through sintering
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Titushkin, Dmitry; Surma, Alexey (Proton-Electrotex, JSC, Russia)
Monchy, Michiel de (Alpha Alent, Russia)
Lifton, Anna (Alpha an Alent plc Company, Russia)
Inhalt:
Present article covers aspects of reliability improvement for power semiconductor devices of 80+ mm chip diameter by low temperature of silicon die- molybdenum disc junction with silver nanoparticles. The article studies the connection between the porosity of the joint and the cycling endurance in experimental samples and shows the area of optimal pressure and temperature for the junction procedure.