A New Behavioral Model for Accurate Loss Calculations in Power Semiconductors

Inhalt:
In this paper, a new behavioural model is proposed for calculating power losses in power semiconductor switches. In contrast to models existing in literature which mostly model losses only in terms of Ic/f , Vdc and Tj, this paper also takes into account Rg and Vge which heavily affect the losses but are generally neglected. Moreover, the model also calculates losses as a function of the chip area per switch, which makes this model ideal for calculating the optimum chip area for a given application. The accuracy of this model is experimentally demonstrated on a HybridPACK Drive FS820R08A6P2 power module from Infineon, and the model is found to offer significantly better accuracy compared to the existing models.