A New Behavioral Model for Accurate Loss Calculations in Power Semiconductors
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 9Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Pai, Ajay Poonjal; Reiter, Tomas (Infineon Technologies AG, Germany)
Maerz, Martin (Fraunhofer IISB, Germany)
In this paper, a new behavioural model is proposed for calculating power losses in power semiconductor switches. In contrast to models existing in literature which mostly model losses only in terms of Ic/f , Vdc and Tj, this paper also takes into account Rg and Vge which heavily affect the losses but are generally neglected. Moreover, the model also calculates losses as a function of the chip area per switch, which makes this model ideal for calculating the optimum chip area for a given application. The accuracy of this model is experimentally demonstrated on a HybridPACK Drive FS820R08A6P2 power module from Infineon, and the model is found to offer significantly better accuracy compared to the existing models.