Static Characterization of Discrete State-of-the-Art SiC Power Transistors

Inhalt:
Silicon carbide transistors in TO247 packages are wide-spread despite of their limitations regarding parasitic inductance and power dissipation if an electrically insulated heat-sink attach is required. This paper publishes a comprehensive study on the static performance of commercially available SiC discrete transistors. The devices were characterized using a thermally controlled heat sink emulator and precision electrical measurement equipment. The device-specific differences regarding the RDSon stability with regard to current and temperature in forward as well as in reverse operation were investigated.