Current Measurement and Gate-Resistance Mismatch in Paralleled Phases of High Power SiC MOSFET Modules
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Horff, Roman; Bertelshofer, Teresa; Maerz, Andreas; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Center of Energy Technology (ZET), Universitätsstr. 30, 95447 Bayreuth, Germany)
Inhalt:
This paper deals with the problems of current measurement in paralleled phases. A solution based on low inductive shunts is proposed. The influence of gate-resistance mismatch on the switching behaviour and the resulting switching losses are analysed for high power SiC MOSFET modules.