Comparison of Unipolar Silicon Carbide Power Transistors Used in High Switching Frequency Inverter Topologies
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Fahlbusch, Sebastian.; Sahli, Nizar; Kloetzer, Sebastian; Mueter, Ulf; Schaening, Bjoern; Hoffmann, Klaus F. (Helmut Schmidt University, Faculty of Electrical Engineering, Department of Power Electronics, Germany)
Inhalt:
Unipolar silicon carbide (SiC) power transistors are a promising alternative in power electronic applications at dc-link voltages above 600 V, in which IGBTs are predominantly used. SiC enables a significant increase of switching frequencies in such applications. The objective of this paper is to analyse potentials of commercially available unipolar SiC power transistors and their suitability for high frequency operation. For this purpose, SiC-MOSFETs and SiC-JFETs are investigated in a hard switching inverter half-bridge topology.