Application Advantages and Disadvantages of Modern Fast Switching MOSFETs in VRM

Inhalt:
Advancements in integrated MOSFET silicon and packaging technologies have increased switching speed and improved over-all system performance for VRM applications. However, fast-switching can also lead to voltage overstress and an increased dv/dt and di/dt turn-on susceptibility that previously was not as prominent a concern. VRM application advantages and disadvantages associated with fast switching are analyzed, and methods to minimize dv/dt-induced and di/dt-induced turn-on are provided. Finally, an optimized PCB layout that takes full advantage of fast switching MOSFETs is presented.