Demonstration of superior SiC MOSFET Module performance within a Buck-Boost Conversion System
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Slawinski, Maximilian; Villbusch, Tim; Heer, Daniel; Buschkuehle, Marc (Infineon Technologies AG, Germany)
Inhalt:
This paper shows the performance of Infineon’s new SiC MOSFET power module operating in a buck-boost conversion system. The fast switching characteristics of the module will be illustrated with the help of double pulse measurements which show dv/dt levels above 50kV/mus. A conversion efficiency of 99% has been measured at a switching frequency of 100 kHz. In addition a comparison to a Si IGBT based system has been made to evaluate the potential performance gain of using the Infineon SiC MOSFET module. Finally the performance increases achieved by the use of synchronous rectification, which has been tested up to a switching frequency of 500 kHz, will be delineated.