Automotive-grade P-channel Power MOSFETs for Static, Dynamic and Repetitive Reverse Polarity Protection

Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2016

Seiten: 5Sprache: EnglischTyp: PDF

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Autoren:
Scrimizzi, Filippo; Longo, Giuseppe; Gambino, Giusy (STMicroelectronics, Stradale Primosole 50, Catania, Italy)

Inhalt:
The latest P-channel trench technology qualified for automotive applications (according to AEC Q101) from STMicroelectronics is able to provide an outstanding performance in terms of: • low Qrr which allows a quick current flowing interruption in case of reverse polarity events • high ruggedness versus repetitive pulse sequence, according to ISO 7637 Pulse 1 condition.