Selection of materials for IGBT modules to achieve stable short circuit failure behaviour
Konferenz: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
28.06.2016 - 30.06.2016 in Shanghai, China
Tagungsband: PCIM Asia 2016
Seiten: 8Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Li, Jianfeng; Johnson, Christopher Mark (Department of Electrical and Electronic Engineering, The University of Nottingham, University Park, Nottingham NG7 2RD, UK)
Yaqub, Imran (Dynex Semiconductor Limited, Doddington Road, Lincoln LN6 3LF, UK)
IGBT modules which can fail to stable short circuit mode have great allocations in electricity network related fields. Sn3.5Ag solder joint and sintered Ag joint for the die attachment and Mo, Cu, Sn3.5Ag, Al and Ag foils for the top side insert material in the press pack like single IGBT samples have been investigated using overcurrent test plus current passage test. The results reveal that the Sn3.5Ag solder joint in combination with the Sn3.5Ag, Al or Ag foil can be employed to achieve the stable short circuit failure mode, and the best result is achieved with the Ag foil. This can be attributed to the formation of conductive networks / channels through the failed IGBT, and good mating between the insert material and the failed IGBT.