Analysis of different IGBT gate driver strategies influencing dynamic paralleling performance
Konferenz: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
28.06.2016 - 30.06.2016 in Shanghai, China
Tagungsband: PCIM Asia 2016
Seiten: 9Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Jadhav, Vishal; Zhou, Yizheng; Jansen, Uwe (Infineon Technologies AG, Germany)
IGBT gate driver design strategies are very important for efficient paralleling of IGBT modules and can significantly influence their static and dynamic current sharing. Four commonly implemented gate driving strategies for 3.3kV high voltage IGBT modules are presented and their pros and cons are discussed in this paper based on measurement results. Strategies of using isolated gate drivers, gate driver core along with passive adapter boards, gate driver core along with active adapter boards and direct IGBT driving are most commonly implemented in applications where paralleling IGBTs is needed to achieve the desired power levels. Effects of various gate driver strategies related to busbar symmetry, internal module parameters and driving parameters are measured utilizing a double pulse test used for dynamic characterization of IGBT modules.