Surge current capability of power electronics for surge protection
Konferenz: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
28.06.2016 - 30.06.2016 in Shanghai, China
Tagungsband: PCIM Asia 2016
Seiten: 8Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Schork, Franz; Brocke, Ralph (Dehn + Söhne GmbH + Co. KG., Germany)
Rock, Michael (Technical University Ilmenau, Germany)
The purpose of this work is to show how power electronic devices like diodes, thyristors, MOSFETs and IGBTs behave on surge current stress. Especially the reaction on surge currents with the waveforms 8/20 mus and 10/350 mus and peak values in kA range which are common in surge protection will be discussed. This paper shows the defects occurred at surge current stress and the limits of the named devices. A further important characteristic is the gate control of the switching power devices during surge current events which will be discussed. All results of the impulse tests are rated for future application in overvoltage protection.