Gate-Driver with Full Protection for SiC-MOSFET Modules
Konferenz: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
28.06.2016 - 30.06.2016 in Shanghai, China
Tagungsband: PCIM Asia 2016
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Fink, Karsten; Volke, Andreas (Power Integrations GmbH, Germany)
Wei, Winson (Power Integrations, China)
Wiesner, Eugen; Thal, Eckhard (Mitsubishi Electric Europe B. V., Germany)
Inhalt:
This paper is presenting an advanced method of full protection by the gate driver unit for a SiC-MOSFET module using its sense terminals. The presented test results are including features like an adjustable overcurrent and short-circuit detection together with a Soft Shut Down function and Active Clamping, which is reducing the occurring over-voltage spikes at turn-off actively.