A Nonlinear Memristor Model with Activation Thresholds and Variable Window Functions
Konferenz: CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and their Applications
23.08.2016 - 25.08.2016 in Dresden, Deutschland
Tagungsband: CNNA 2016
Seiten: 2Sprache: EnglischTyp: PDF
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Autoren:
Mladenov, Valeri; Kirilov, Stoyan (Department of Theoretical Electrical Engineering, Technical University of Sofia, Sofia, Republic of Bulgaria)
Inhalt:
The fundamental idea of the present research is to propose a new nonlinear drift memristor model suitable both for low- and high-intensity electric fields. The new model is based on the Generalized Boundary Condition Memristor Model (GBCM) and Joglekar model and it has several of their advantages. It is also able to switching automatically between several Joglekar window functions with different exponents in its operation process in accordance with the electric field intensity.