DC behaviour of a non-volatile memristor: part I
Konferenz: CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and their Applications
23.08.2016 - 25.08.2016 in Dresden, Deutschland
Tagungsband: CNNA 2016
Seiten: 2Sprache: EnglischTyp: PDF
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Autoren:
Ascoli, A.; Tetzlaff, R. (Institut fur Grundlagen der Elektrotechnik und Elektronik, TU Dreden, Dresden, Germany)
Chua, L. O. (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA)
Strachan, J. P.; Williams, R. S. (Hewlett Packard Labs, 3000 Hanover Street, Palo Alto, California 94304, USA)
Inhalt:
This paper presents graphical tools from nonlinear system theory so as to unveil the properties of the switching kinetics of a tantalum oxide memristor. These theoretic concepts lie at the basis of the analysis of the device DC behaviour provided in part II.