DC behaviour of a non-volatile memristor: part II
Konferenz: CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and their Applications
23.08.2016 - 25.08.2016 in Dresden, Deutschland
Tagungsband: CNNA 2016
Seiten: 2Sprache: EnglischTyp: PDF
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Autoren:
Ascoli, A.; Tetzlaff, R. (Institut fur Grundlagen der Elektrotechnik und Elektronik, TU Dresden, Dresden, Germany)
Chua, L. O. (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA)
Strachan, J. P.; Williams, R. S. (Hewlett Packard Labs, 3000 Hanover Street, Palo Alto, California 94304, USA)
Inhalt:
Adopting the system theoretic tools introduced in part I, this paper gains a deep insight into the fading memory effects emerging in a non-volatile memristor under DC inputs. Experimental evidence for the history erase phenomenon is also provided here.