Impact of Quantized Conductance Effects of ReRAM Devices on Neuromorphic Networks
Konferenz: CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and their Applications
23.08.2016 - 25.08.2016 in Dresden, Deutschland
Tagungsband: CNNA 2016
Seiten: 2Sprache: EnglischTyp: PDF
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Autoren:
Siemon, Anne; Ferch, Sebastian; Linn, Eike (Institut für Werkstoffe der Elektrotechnik II (IWE II), RWTH Aachen University, 52074 Aachen, Germany & JARA – Fundamentals for Future Information Technology, 52425 Jülich, Germany)
Menzel, Stephan (Peter Grünberg Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany & JARA – Fundamentals for Future Information Technology, 52425 Jülich, Germany)
Waser, Rainer (Institut für Werkstoffe der Elektrotechnik II (IWE II), RWTH Aachen University, 52074 Aachen, Germany & JARA – Fundamentals for Future Information Technology, 52425 Jülich, Germany & JARA – Fundamentals for Future Information Technology, 52425 Jülich, Germany)
Inhalt:
Redox based resistive switches (ReRAMs) are one of the most promising candidates for future ultra-dense nonvolatile memories. Besides memory applications it was shown that ReRAMs offer logic-in-memory capabilities and can be used for neuromorphic network approaches. It has been shown that quantized conduction steps can appear in ReRAMs, which can influence their behavior in applications. In this work the impact on neuromorphic networks is investigated. It is shown that the occurrence of quantized conduction restricts the functionality of the network.