3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) with Smooth Switching
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Ishigaki, Takashi; Hayakawa, Seiichi; Murata, Tatsunori; Nozoe, Toshio; Onose, Hidekatsu; Miki, Hiroshi; Sagawa, Masakazu; Oda, Tetsuo; Yasui, Kan; Kawase, Daisuke; Takayanagi, Yuji; Yamada, Renichi (Hitachi Power Semiconductor Device, Japan)
Masuda, Toru; Tega, Naoki (Hitachi, Japan)
Inhalt:
We have developed a 3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) module. An extremely low internal package inductance can make the best use of Full-SiC. Demonstration of fast and smooth switching characteristics of the module culminate in a total switching loss one fourth of a direct Si-IGBT equivalent. Superior output characteristics of the Full-SiC module under traction inverter simulation are presented. For accurate calculation, features of reverse conduction characteristics of the Full-SiC nHPD2 are considered.