Dynamic Characterization of Next Generation Medium Voltage (3.3 kV, 10 kV) Silicon Carbide Power Modules
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Hayes, Jonathan; Curbow, William Austin; Sparkman, Brett; Martin, Daniel; Olejniczak, Kraig; Wijenayake, Ajith; McNutt, Ty (Wolfspeed, USA)
Inhalt:
Dynamic characterization of a power module enables users to understand the impact of design tradeoffs required to achieve their system performance goals. This paper introduces the dynamic analysis of Wolfspeed’s new high-performance 3.3 kV and 10 kV all-SiC power modules based on 3rd generation SiC MOSFET technology. A clamped inductive load testbed is utilized to analyze switching events across multiple system variables including bus voltage, switched current and gate resistance. The motivation for this work is to demonstrate the superior performance of medium voltage SiC MOSFETs / power modules, applicable to a variety of different medium voltage applications.