Characterization of 1.7 kV SiC MOSFET Modules for Medium/High Power Current Source Inverter in Photovoltaic Applications
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Alves Rodrigues, Luis Gabriel (Commissariat à l’Énergie Atomique et aux Énergies Alternatives, Francerance)
Martin, Jeremy; Catellani, Stephane (Commissariat à l’Énergie Atomique et aux Énergies Alternatives, France)
Ferrieux, Jean-Paul (G2Elab, Grenoble, France)
Inhalt:
The pros and cons of SiC technology have been shown in literature, especially regarding voltage source inverter operation. Nevertheless, there is a lack of studies concerning the switching process in current source inverter structures. The purpose of this paper is to study and discuss the switching characterization of a novel 1.7 kV full-SiC MOSFET module suitable for current source inverter in large-scale photovoltaic applications. Besides that, two 1.7 kV SiC MOSFET devices are experimentally compared, from two different manufacturers. The characterization of switching energies as a function of temperature is also carried out. Furthermore, a rigorous analysis of current sensor techniques is presented.