Reliable Interconnection Technologies for High-Temperature Operation of SiC MOSFETs

Inhalt:
For power electronics applications such as power conversion for renewable energies, industrial applications, and in particular electric vehicles, the high operating temperatures achievable with SiC power semiconductors are a promising feature. However, high-temperature operation is not only limited by the device capabilities, but also by the packaging technologies used. In this paper, a packaging concept for operation of SiC MOSFETs at temperatures of 200deg C and beyond is presented. The concept is based on Ag-sintered chip front- and backside and Cu wire or Ag ribbon interconnection. The feasibility of the packaging concept for a SiC-based power module is demonstrated, and thermal shock cycling and high-temperature storage tests have been performed to benchmark different materials and technologies and to verify the reliability of the proposed concept.