The New CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Peters, Dethard; Basler, Thomas; Zippelius, Bernd (Infineon Technologies, Germany)
Aichinger, Thomas; Bergner, Wolfgang; Esteve, Romain; Kueck, Dyaniel; Siemieniec, Ralf (Infineon Technologies, Austria)
Inhalt:
The paper describes a novel SiC trench MOSFET concept which is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance of the 45 mOmega / 1200 V CoolSiC(exp TM) MOSFET are presented. The favorable temperature behavior of the on-state and the low sensitivity of the switching energies to temperature make the device easy to use. The gate oxide is designed to fulfill requirements of industrial applications. Long term gate oxide tests reveal that the extrinsic failure rate can be confidentially predicted to be low enough for industrial applications.