High Efficient and Soft IGBT Technology
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Hondo, Suguru; Enomoto, Yu; Kawamoto, Yuta; Hikasa, Akihiro; Ino, Kazuhide (ROHM Co. Ltd., Japan)
Inhalt:
Recently we are expanding wide range of power device technologies which are including SiC based technologies and Si based IGBT device technologies. The expectations for power semiconductors in industrial applications and home appliances for saving energy and reducing overall system costs are continuously increasing. This paper presents our latest generation IGBT device, with optimized cell structures and thinner wafer technologies. Thanks to these improvements, we have realized 6% lower saturation voltage, faster turn-off with keeping soft switching behavior. It contributes to higher circuit efficiency up to 1.2% compared with our previous generation IGBT technologies.