A Novel Gate Drive Concept to Eliminate Parasitic Turn-on of SiC MOSFET in Low Inductance Power Modules

Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2017

Seiten: 7Sprache: EnglischTyp: PDF

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Autoren:
Maerz, Andreas; Bertelshofer, Teresa; Bakran, Mark-M. (University of Bayreuth, Germany)
Helsper, Martin (Siemens AG, Germany)

Inhalt:
In this paper a new gate drive concept for low inductance SiC MOSFET power modules is presented. Experimental results show that the proposed 3-level turn-off strategy will prevent parasitic turn-on (PTO) under fast switching operation. This will significantly reduce turn-on and reverse turn-off losses of SiC MOSFETs as well as reduce the overvoltage of the bodydiode at turn-off.