650 V, 7 mOhm SiC MOSFET Development for Dual-Side Sintered Power Modules in Electric Drive Vehicles
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Hayes, Monty; Fruth, John; Neelakantan, Aditya; Campbell, Robert; Gerbsch, Erich (Delphi Automotive Systems, USA)
Casady, Jeffrey; Hull, Brett; Zhang, Jon; Allen, Scott; Palmour, John (Wolfspeed, a Cree Company, USA)
Inhalt:
For the first time, a new 650V SiC MOSFET chip is designed, fabricated, and tested for use in dual-side soldering and sintering processes. The RDSON was measured to be ~7mOmega up to 150A at 25deg C in package form. The corresponding specific RDSON was 1.8mOmega·cm2. The SiC MOSFET chip had a mean measured breakdown of 964V, with 31V standard deviation, across a population of 500 die. Only a 35-40% increase in RDSON was measured from 25deg C to 150deg C. With no knee voltage, conduction losses relative to comparably rated Si IGBT power modules can be reduced up to 80%.