1.7 kV High-Current SiC Power Module Based on Multi-Level Substrate Concept and Exploiting MOSFET Body Diode during Operation
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Kicin, Slavo; Skibin, Stanislav; Bernhard, Christof; Bianda, Enea; Canales, Francisco (ABB Corporate Research, Baden-Dättwil, Switzerland)
Hartmann, Samuel; Fischer, Fabian; Morin, Pauline; Gade, Robert (ABB Semiconductors, Lenzburg, Switzerland)
Inhalt:
The paper presents switching performance of a high-current 1.7 kV SiC half-bridge (phase-leg) module based on ABB’s new module platform - LinPak. The module is based on a multi-level substrate concept allowing high flexibility in power module design necessary for paralleling of many semiconductor devices. The MOSFET body diode is used as a free-wheeling diode since the module does not contain any SiC Schottky diodes. The module is carefully optimized by electromagnetic and electro-thermal simulations before its assembling and testing.