A Comparative Study on Si-SJ-MOSFETs vs. GaN-HEMTs Used for LLC-Single-Stage Battery Charger

Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2017

Seiten: 8Sprache: EnglischTyp: PDF

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Autoren:
Keuck, Lukas; Hosemann, Patrick; Strothmann, Benjamin; Boecker, Joachim (University of Paderborn, Germany)

Inhalt:
It is a common practice to charge batteries with a pure DC current. For this purpose, a bank of fast-aging electrolytic capacitors is usually used in single-phase battery chargers to suppress the low frequency input power from entering into the battery. Single-stage chargers permit to eliminate this electrolytic capacitor bank by transferring the input power to the battery directly. This paper covers the design of a single-stage charger based on a LLC resonant converter. A comparative design is presented for two transistor types: GaN-HEMTs and Si-SJ-MOSFETs. Theoretical and experimental results show that GaN-HEMTs allow higher switching frequencies and also give a higher total efficiency due to their lower parasitic output capacitance.