The Next Generation 4500 V / 3000 A BIGT Stakpak Modules

Inhalt:
In this paper, we introduce the next generation Stakpak module employing 4500V BIGT chips which combine both IGBT and diode mode operation in a single structure. This newly developed chip has been optimized for hard switching applications, which together with the an improved Stakpak module layout yields the most powerful IGBT-based device up to date with a current rating of 3000A. One of the most important features of this device is its high surge current capability, which is achieved independently of the gate-driving conditions. The paper will cover the chip and module design aspects supported by a full range of static and dynamic results at module level.