Automated Test Bench for the Measurement of Si-IGBT and SiC-MOSFET Hybrid Switches
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Meissner, Michael; Fahlbusch, Sebastian; Hoffmann, Klaus F. (Helmut Schmidt University – University of the Federal Armed Forces, Hamburg, Germany)
Inhalt:
Hybrid switches consisting of a Si-IGBT and a SiCMOSFET are a promising alternative for power loss reduction for example in resonant topologies. The parallel connection of two different power semiconductor technologies combines a lot of parameters which have to be analysed in detail for an optimisation. In this paper, a concept of an automated test bench for measuring varieties of operating points concerning such hybrid switches with a minimum of personal attention and time is presented.