Comparison of the Short Circuit Capability of Planar and Trench SiC MOSFETs
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 9Sprache: EnglischTyp: PDF
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Autoren:
Pappis, Douglas; de Menezes, Lucas; Zacharias, Peter (University of Kassel, Germany)
Inhalt:
An experimental investigation about the short circuit capability of planar and the new trench SiC MOSFETs is presented, providing a performance comparison between them. 1200 V - 40 mOmega n-channel MOSFET from Wolfspeed (planar) and ROHM (trench) were tested. Electro-thermal simulations are presented, besides investigations on the turn-off overvoltage. Maximum safe withstand time is investigated in detail, tracing limits for single and multiple short circuits. Trench device superior performance was confirmed, standing up to 2.0 mus at 1000 V, whilst the planar up to 1.0 mus. Gate threshold, on-resistance, drain and gate leakage currents were monitored across multiple events.