On Developing a dV/dt Rating for Commercial 650 V- and 1200 V-Rated SiC Schottky Diodes

Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2017

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Wang, Gang-Yao; Van Brunt, Edward; Barbieri, Thomas; Hull, Brett; Richmond, Jim; Palmour, John (Wolfspeed, USA)

Inhalt:
In this work, the dV/dt ruggedness of commercial 4H-SiC Junction-Barrier Schottky (JBS) diodes was explored in an attempt to identify an upper failure limit and characterize the impact on long-term reliability. A high-speed pulse generator utilizing a silicon carbide (SiC) MOSFET was used to deliver voltage slew rates up to 800V/ns to the diodes under test. The impact of cryogenic temperatures was also studied. To understand the effect of repetitive dV/dt stress in a power electronics application, 650V- and 1200V-rated diodes were subjected to a repetitive voltage slew rate of 400V/ns, and then tested for avalanche ruggedness and leakage shift. The results demonstrated that the extreme dV/dt stress did not cause immediate failures and did not introduce latent weakness.