Dual On-State Gate Driver Concept for Improved Drive of Silicon Carbide MOSFETs
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Fahlbusch, Sebastian; Fisahn, Fabian; Meissner, Michael; Mueter, Ulf; Kloetzer, Sebastian; Hoffmann, Klaus F. (Helmut Schmidt University, Hamburg, Germany)
Inhalt:
A novel gate drive concept with two separately adjustable on-state gate source voltage levels for improved driving of silicon carbide MOSFETs is presented. The new approach allows enhanced use of SiC-MOSFETs’ conduction properties in combination with fast and efficient switching operation. The impact of the concept is tested and compared with a conventional gate drive circuit. Tests are performed in a standard buck converter equipped with a commercially available TO-packaged SiC-MOSFET. The buck converter operates at a switching frequency of 50 kHz, 600 V dc-link voltage and output power up to 13 kW.