Reliability Investigation on SiC based Diode and MOSFET Modules Developed for High Power Conversion in Medical X-Ray Applications
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Otto, Alexander; Dudek, Rainer; Rzepka, Sven (Fraunhofer-Institute ENAS, Germany)
Ras, Mohamad Abo; Essen, Tobias von (Berliner Nanotest & Design, Germany)
Bast, Markus; Hindel, Armin; Eisele, Ronald (FuE-Zentrum FH Kiel GmbH, Germany)
Mueter, Ulf (Helmut Schmidt University, Germany)
Lunding, Arne (Philips Medical Systems DMC GmbH, Germany)
Inhalt:
For the sake of compactness and mass reduction, the high power converter modules for x-ray generators in medical applications have been developed utilizing novel SiC diodes and SiC MOSFETs for the first time. The paper discusses the results of comprehensive investigations on the thermal per-formance as well as on the reliability of these modules – as found by power cycling tests supplemented by electro-thermo-mechanical simulations.