Thermal Impedance Matrix Characterization of Co-Packed Discrete IGBT and Diode

Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2017

Seiten: 4Sprache: EnglischTyp: PDF

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Autoren:
Salinaro, Alberto; Hoenes, Hans-Peter (ON Semiconductor GmbH, Germany)

Inhalt:
The thermal characterization of electronic pack-ages having multiple independent heat sources, such as an IGBT co-packed with a free-wheeling diode, is of crucial importance in the design of reliable and efficient power systems. The junc-tion-to-case thermal resistance RThetaJC for each thermal path starting from each junction must be determined. Moreover, since the dice are thermally coupled through the lead frame, cross-coupled thermal resistances cannot be neglected. In this paper, the TDIM – Thermal Dual Interface Measurement method – is applied together with the analysis of structure functions to obtain the thermal impedance matrix of a 120 A, 650 V IGBT co-packed with a free-wheeling diode.