Compact Diode-less Bidirectional GaN Based Buck Converter for Mobile DC-DC Applications
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Kloetzer, Sebastian; Mueter, Ulf; Fahlbusch, Sebastian; Hoffmann, Klaus F. (Helmut Schmidt University, Faculty of Electrical Engineering, Department of Power Electronics, Germany)
Inhalt:
In this paper, the switching and conduction performance of a commercially available 650 V, 65 mΩ enhancement mode gallium nitride high electron mobility transistor (eGaN HEMT) is evaluated. Based on the measurements, the operation strategy for use in a bidirectional diode-less 400 V,5 kW buck converter with high power density is derived. When challenging timing constraints are met, switching frequencies of several hundred kHz at the worstcase operating point can be reached by using boundary conduction mode (BCM) and soft turn-on.