Comparative Analysis of the Measurement Techniques to Characterize SiC-Power-Modules

Inhalt:
Thanks to the rapid technical progress and cost reduction, silicon carbide (SiC) semiconductor modules are more and more attractive in medium power application. Characterization of new semiconductor modules are the first and one of the most important work in power converter development. In this contribution, a short guideline is given for characterization of SiC-based modules by means of double-pulse test method, including voltage and current measurement techniques, test setup, connection techniques and proceeding of measurement data. With case studies the discussed techniques are applied for characterization and comparison of different kind of SiC-based semiconductor modules.