Short Circuit Capability of 650 V Normally Off GaN E-HEMT and MOSFET-HEMT Cascode
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Pappis, Douglas; Goebel, Kevin; Zacharias, Peter (University of Kassel, Germany)
Inhalt:
An investigation of the short circuit capability of 650 V GaN power switches is presented, focusing on a 25 mOmega E-HEMT (GaNSystems), besides two MOSFET-HEMT Cascode (Transform) with 150 mOmega and 290 mOmega. At nominal gate voltages, all devices are damaged under short circuit with drain-to-source voltage above 300 V, preventing safe turn-off. Lowering the gate voltage, an unstable range occurs between 250 V and 350 V. Below, responses are similar to Si-MOSFETs. High gate currents were identified.