Advantages of Using 650 V SiC MOSFETs in High-Frequency DC-DC Converters
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Sorrentino, Giuseppe; Gaito, Antonino (STMicroelectronics, Italy)
Inhalt:
This paper compares the electrical and thermal behavior of DC-DC boost converters when a new 650V SiC MOSFET replaces a standard silicon device as the main switch. We will see how this state-of-the-art technology raises the bar for systems by offering higher efficiency with a more sustainable, or green, impact.