Impact of Circuit Carrier Technologies on MHz-switching of GaN Half-Bridge Circuits
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 9Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Seliger, Norbert; Stubenrauch, Franz (University of Applied Sciences Rosenheim, Germany)
Brendel, Christian (DR. JOHANNES HEIDENHAIN GmbH, Germany)
Schmitt-Landsiedel, Doris (Technical University of Munich, Germany)
Inhalt:
Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650 V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype.