Double Side Sintered IGBT + FRD, 650 V / 200 A, in a STO247 Package for High Performance Automotive Applications
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Le Henaff, Francois; Greca, Gustavo; Salerno, Paul; Durham, Jeffrey; Boureghda, Monnir; Lifton, Anna (Alpha Assembly Solutions, USA)
Harel, Jean Claude; Laud, Satyavrat (Renesas Electronics, USA)
He, Weikun (Mentor Graphics, USA)
Inhalt:
Double side sintered STO247 type packaged devices from Renesas Electronics America (REA) (tentative part number: xJH6501DPz, currently under development) are benchmarked against the leading device on the market used in high performance electric cars. The Renesas component utilize 650 V, 200 A rated IGBT die copackaged with a similarly rated companion FRD die. Both components are interchangeable on the same board footprint, since the dimensions are approximately the same. Samples of both devices were tested at a δ Tj of 85 °C and the xJH6501DPZ proved to be at least 12 times more reliable than the leading device on the market (which failed at around 12 k cycles and the Renesas parts are still electrically functioning and within target specification after 150k cycles). The fully sintered Renesas STO247 packaged samples were also subjected to a δ Tj of 110 °C and demonstrated no signs of failure, even after 350 k cycles.