Gate Drivers for Medium Voltage Applications

Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2017

Seiten: 8Sprache: EnglischTyp: PDF

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Autoren:
Am, Sokchea; Lefranc, Pierre; Frey, David; Hanna, Rachelle; Sarrazin, Benoit (University Grenoble Alpes, G2Elab, France)

Inhalt:
This paper proposes a design methodology to optimize gate drivers for power semiconductor modules (IGBTs, MOSFETs) for Medium Voltage (MV) converters. A signal transmission function and a power transmission function of gate drivers are presented in detail. For safety and long production life, these functions are required for high and very high galvanic insulation voltage capabilities. These insulations systems can be achieved by the help of the insulating material in a pot core planar transformer. Hence, to fulfill the final application, the study of the insulating dielectric materials is provided. Then, a gate driver with the power transmission function and the signal transmission function is provided and tested to validate the overall gate driver system.